Design of LDO circuit based on curvature compensation reference closed-loop stability

Author:

Ren Sheng-Le1ORCID,Ren Ming-Yuan2ORCID,Gao Tian-Hang3

Affiliation:

1. Quzhou University 1 , Quzhou 324000, China

2. Jinhua Advanced Research Institute 2 , Jinhua 321013, China

3. Harbin University of Science and Technology 3 , Harbin 150080, China

Abstract

In this paper, a low dropout (LDO) circuit based on a curvature compensation benchmark and closed-loop stability is designed. This circuit compensates for the higher order term of VBE in a BJT through the subthreshold characteristic of MOSFET and achieves the effect of curvature compensation. The bandgap reference circuit provides a stable input voltage for the LDO circuit, while the source follower and adaptive bias circuit improve the response speed and closed-loop stability of the LDO circuit. The temperature drift coefficient of the bandgap circuit is 8.11 ppm/°C, the input voltage is 3–5 V, the output voltage is 2.8 V, and the linear adjustment rate is 0.22%.

Funder

Jinhua Public Welfare Technology Application Research Project

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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