Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1711165
Reference12 articles.
1. All-optical wavelength conversion at bit rates above 10 Gb/s using semiconductor optical amplifiers
2. 40 Gbit/s wavelength conversion over 24.6 nm using FWM in a semiconductor optical amplifier with an optimised MQW active region
3. 40-Gb/s optical 3R regenerator using electroabsorption modulators for optical networks
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1. Modeling of Ultrafast Waveguided Electro-Absorption Modulator at Telecommunication Wavelength (λ = 1.55 μm) Based on Intersubband Transition in an InGaAs/AlAs/AlAsSb Asymmetric Coupled Double Quantum Well Lattice-Matched to InP;IEEE Journal of Quantum Electronics;2021-08
2. Studies on spatial nonlocal optical absorption properties in AlGaAs/GaAs three-step quantum well;Indian Journal of Physics;2018-02-17
3. Spatially nonlocal effects on optical absorption properties in coupled quantum wells with an applied electric field;Chinese Physics B;2014-11-28
4. Nonlocal optical properties in AlGaAs/GaAs coupled quantum well nanostructures;The European Physical Journal B;2014-07
5. Intersubband absorption modulation in coupled double quantum wells by external bias;Semiconductor Science and Technology;2009-03-17
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