First principles investigation of Y2O3-doped HfO2
Author:
Affiliation:
1. Brazilian Nanotechnology National Laboratory (LNNano)/CNPEM, Campinas, São Paulo, Brazil
2. Department of Physics, University of York, York, Heslington YO10 5DD, United Kingdom
Funder
Engineering and Physical Sciences Research Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5110669
Reference35 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
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5. Electronic and magnetic properties of the cation vacancy defect inm−HfO2
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