Reduced interface recombination in Cu2ZnSnS4 solar cells with atomic layer deposition Zn1−xSnxOy buffer layers
Author:
Affiliation:
1. Ångström Solar Center, Solid State Electronics, Engineering Sciences, Uppsala University, Box 534, 75121 Uppsala, Sweden
Funder
Swedish Foundation for Strategic Research (SSF)
Wallenberg Academy Fellows program
Energimyndigheten (Swedish Energy Agency)
Vetenskapsrådet (VR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4937998
Reference20 articles.
1. Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films
2. Cu2ZnSnS4 thin film solar cells
3. Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency
4. Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4absorber
5. Cliff-like conduction band offset and KCN-induced recombination barrier enhancement at the CdS/Cu2ZnSnS4 thin-film solar cell heterojunction
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