Precision defect engineering of metal/insulator/metal diodes using atomic layer deposition to localize Ni impurities in Al2O3 tunnel barriers
Author:
Affiliation:
1. School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97330, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0045721
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1. Industrial Waste Heat Recovery - Potential Applications, Available Technologies and Crosscutting R&D Opportunities
2. Tunneling of a Wave Packet
3. Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes
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5. Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
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1. Size Dependence of the Adsorption Properties of Nickel Clusters on the Surface of Aluminum Oxide;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-12
2. The improvement of the embedded Ag nanoislands on the performance of Au/Ag/HfOx/HfO2/Ag-NIs/Au devices;Journal of Materials Science: Materials in Electronics;2023-05
3. Ultraviolet photo-enhanced atomic layer deposition for improving dielectric properties of low temperature deposited Al2O3;Journal of Vacuum Science & Technology A;2022-07
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