Evolution of magnetic anisotropy and spin-reorientation transition in Fe films grown on GaAs(113)A substrates by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1929852
Reference42 articles.
1. Magnetoelectronics
2. Spintronics: A Spin-Based Electronics Vision for the Future
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4. Interface chemistry of metal‐GaAs Schottky‐barrier contacts
5. Molecular beam epitaxial growth of single‐crystal Fe films on GaAs
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1. Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices;Applied Physics Letters;2009-11-16
2. Strong dependence of the magnetic anisotropy on the growth temperature of () films on GaAs(113)A substrates;Journal of Magnetism and Magnetic Materials;2009-10
3. Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically flat heterointerfaces;Journal of Applied Physics;2009-04
4. Spin wave excitations in Fe films grown on GaAs(113)A substrates;Journal of Magnetism and Magnetic Materials;2008-11
5. Effect of carbon and post-annealing treatment on magnetic properties of high-quality iron thin films;Journal of Crystal Growth;2006-12
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