Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: Spectroscopic experiment versus 10-band k·p modeling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4810920
Reference37 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
3. Current status of research and development of III N V semiconductor alloys
4. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
5. Comparison of GaInNAs Laser Diodes Based on Two to Five Quantum Wells
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2. Influence of temperature on ground state energy of bound polaron in asymmetric Gaussian potential quantum well in presence of electromagnetic field;Communications in Theoretical Physics;2020-10-15
3. The influences of electric field and temperature on state energies of a strong-coupling polaron in an asymmetric Gaussian potential quantum well;Chinese Journal of Physics;2018-04
4. Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry;Journal of Applied Physics;2018-01-28
5. Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gap;Japanese Journal of Applied Physics;2017-07-13
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