Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing-Reference-Cited by-同舟云学术

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Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing

Published:1997-06-30 Issue:26 Volume:70 Page:3573-3575
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sengupta D. K.,Horton T.,Fang W.,Curtis A.,Li J.,Chuang S. L.,Chen H.,Feng M.,Stillman G. E.,Kar A.,Mazumder J.,Li L.,Liu H. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.119237

Reference25 articles.

1. Quantum‐well infrared photodetectors

2. InGaAs/InP long wavelength quantum well infrared photodetectors

3. Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells

4. Multicolor voltage-tunable quantum-well infrared photodetector

5. Infrared absorption and photoconductive gain of quantum well infrared photodetectors

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1. Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells;Laser & Optoelectronics Progress;2018

2. Effect of ion implantation on quantum well infrared photodetectors;Infrared Physics & Technology;2007-04

3. Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells;Journal of Applied Physics;2003-04-15

4. Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing;Infrared Physics & Technology;2001-06

5. Tuning the detection wavelength of quantum-well infrared photodetectors by single high-energy implantation;Applied Physics Letters;2001-01

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