Effect of concurrent Mg/Nb-doping on dielectric properties of Ba0.45Sr0.55TiO3 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819173
Reference53 articles.
1. Barium strontium titanate thin film varactors for room-temperature microwave device applications
2. Structure–property relationships in pure and acceptor-doped Ba1−xSrxTiO3 thin films for tunable microwave device applications
3. The influence of Mg doping on the materials properties of Ba1−xSrxTiO3 thin films for tunable device applications
4. Leakage current of Al- or Nb-doped Ba0.5Sr0.5TiO3 thin films by rf magnetron sputtering
5. La doped Ba1−xSrxTiO3 thin films for tunable device applications
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dielectric relaxations without colossal permittivity in Mg and Nb co-doped BaTiO3 ceramics;Ceramics International;2023-12
2. Dielectric properties of BaMg1∕3Nb2∕3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications;Journal of Advanced Dielectrics;2015-12
3. X-ray diffraction analyses of RF sputtered Ba0.6Sr0.4TiO3 thin films grown on Pt/Ti/LaAlO3 (100) substrates;Journal of Materials Science: Materials in Electronics;2014-03-05
4. Determination of Thin Film Ba0.5Sr0.5TiO3 Ferroelectric Effective Mass from I-V Characteristics Calculation Using Transfer Matrix Method;Advanced Materials Research;2014-02
5. Stoichiometry and phase purity control of radio frequency magnetron sputter deposited Ba0.45Sr0.55TiO3 thin films for tunable devices;Journal of Applied Physics;2013-11-07
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