Hole trapping time measurement in low-temperature-grown gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1632538
Reference17 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Picosecond GaAs‐based photoconductive optoelectronic detectors
3. Time-resolved reflectivity characterization of polycrystalline low-temperature-grown GaAs
4. Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide
5. Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature
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