Theoretical evaluation of two dimensional electron gas characteristics of quaternary AlxInyGa1–x–yN/GaN hetero-junctions
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Concordia University, Montreal, Quebec H3G-1M8, Canada
Funder
Natural Sciences and Engineering Research Council of Canada (NSERC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4946842
Reference33 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
3. 40-W/mm Double Field-plated GaN HEMTs
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5. AlGaN/GaN HEMT With 300-GHz $f_{\max}$
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Composition-Dependent Unified Analytical Model for Quaternary InAlGaN/GaN HEMTs for pH Sensing;Journal of Electronic Materials;2021-03-22
2. Use of a bilayer lattice-matched AlInGaN barrier for improving the channel carrier confinement of enhancement-mode AlInGaN/GaN hetero-structure field-effect transistors;Journal of Applied Physics;2017-06-28
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