Demonstration of in-plane magnetized stochastic magnetic tunnel junction for binary stochastic neuron

Author:

Kim Taeyueb1,Park HeeGyum12,Han Ki-Hyuk13,Nah Young-Jun1ORCID,Koo Hyun Cheol13ORCID,Min Byoung-Chul12ORCID,Hong Seokmin1ORCID,Lee OukJae1ORCID

Affiliation:

1. Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, South Korea

2. University of Science and Technology of Korea (UST), Daejeon 34113, South Korea

3. KU-KIST Graduate School, Korea University, Seoul, South Korea

Abstract

A binary stochastic neuron (BSN) or a probabilistic bit (p-bit) randomly fluctuates between digitized “0” and “1” with a controllable functionality of time-averaged value. Such an unconventional bit is the most essential building block for the recently proposed stochastic neural networks and probabilistic computing. Here, we experimentally implement a magnetic tunnel junction (MTJ) for BSN, with relaxation times on the order of tens of milliseconds that can be modulated by a current-induced spin-transfer torque. The NIST Statistical Test Suite (800-22a) is used to verify true random number generation by the BSN-MTJ device. Our results suggest the possibility of using the artificial BSN MTJ device in neuromorphic applications as well as in a recently proposed probabilistic computing.

Funder

Korea Institute of Science and Technology

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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