Enhanced low field magnetoresistance in germanium and silicon-diode combined device at room temperature-Reference-Cited by-同舟云学术

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Enhanced low field magnetoresistance in germanium and silicon-diode combined device at room temperature

Published:2014-11-10 Issue:19 Volume:105 Page:193508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Jiaojiao¹²,Zhang Xiaozhong¹²,Piao Hong-Guang¹²^ORCID,Wang Jimin¹²,Luo Zhaochu¹²

Affiliation:

1. Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China

2. National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing 100084, People's Republic of China

Funder

The National Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4901970

Reference24 articles.

1. Ultrahigh Magnetoresistance at Room Temperature in Molecular Wires

2. Large Magnetoresistance of Electrodeposited Single-Crystal Bismuth Thin Films

3. Large magnetoresistance in non-magnetic silver chalcogenides

4. Magnetic-field-controllable avalanche breakdown and giant magnetoresistive effects in Gold∕semi-insulating-GaAs Schottky diode

5. Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors

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2. Bending Modulated Ultralarge Magnetoresistance in Flexible La_0.67Ba_0.33MnO₃ Thin Film Based Device;ACS Applied Materials & Interfaces;2022-10-20

3. Magnetoresistance retraction behaviour of Ag/p‐Ge:Ga/Ag device under pulsed high magnetic field;Journal of Materials Science & Technology;2022-07

4. Negative differential resistance and unsaturated magnetoresistance effects based on avalanche breakdown;Journal of Physics: Condensed Matter;2020-05-04

5. A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic;IEEE Access;2020

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