Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning-Reference-Cited by-同舟云学术

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Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning

Published:2004-06-21 Issue:25 Volume:84 Page:5133-5135
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ip K.,Gila B. P.,Onstine A. H.,Lambers E. S.,Heo Y. W.,Baik K. H.,Norton D. P.,Pearton S. J.,Kim S.,LaRoche J. R,Ren F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1764940

Reference33 articles.

1. Recent advances in ZnO materials and devices

2. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

3. Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant

4. Transport properties of phosphorus-doped ZnO thin films

5. High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R-plane sapphire

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