Development of digitally processed DC reactive sputtering and its application to the synthesis of (Er0.1Y0.9)2SiO5 layered crystalline thin film
Author:
Affiliation:
1. Department of Engineering Science, The University of Electro-Communications, Tokyo 182-8585, Japan
2. Market Development Section, Shincron Co., LTD., Yokohama, Kanagawa 220-8680, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0065975
Reference36 articles.
1. Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain
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5. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
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1. Binary and ternary metal oxide semiconductor thin films for effective gas sensing applications: A comprehensive review and future prospects;Progress in Materials Science;2024-04
2. Growth of CuAlO2 on SiO2 under a layer-by-layer approach conducted by digitally processed DC sputtering and its transistor characteristics;Japanese Journal of Applied Physics;2024-03-01
3. Atomically precise deposition of (Er0.1Y0.9)2SiO5 combined with digitally processed DC sputtering and non-radical oxidation;Journal of Vacuum Science & Technology A;2022-09
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