“Direct” measurement of the growth rate during the C49 to C54 transformation in TiSi2: Activation energy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1483109
Reference8 articles.
1. Study of C49‐TiSi2and C54‐TiSi2formation on doped polycrystalline silicon usingin situresistance measurements during annealing
2. Materials aspects of Ti and Co silicidation of narrow polysilicon lines
3. Nucleation and growth of C54 grains into C49 TiSi2 thin films monitored by micro-Raman imaging
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