TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing-Reference-Cited by-同舟云学术

TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

Published:2018-04-16 Issue:16 Volume:112 Page:162105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kato Kimihiko¹,Matsui Hiroaki¹²,Tabata Hitoshi¹²^ORCID,Takenaka Mitsuru¹,Takagi Shinichi¹

Affiliation:

1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

2. Department of Bioengineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Funder

Japan Science and Technology Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5020080

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3. Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

4. Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition

5. GaAs interfacial self-cleaning by atomic layer deposition

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