Time‐resolved and space‐resolved Si lattice‐temperature measurements during cw laser annealing of Si on sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95347
Reference5 articles.
1. Raman measurements of temperature during cw laser heating of silicon
2. Pyrometric measurement of temperature during cw argon‐ion laser annealing and the solid‐state regrowth rate of amorphous Si
3. Measurement of Lattice Temperature during Pulsed-Laser Annealing by Time-Dependent Optical Reflectivity
4. Measurement of Lattice Temperature during Pulsed-Laser Annealing by Time-Dependent Optical Reflectivity
5. Direct observation of laser‐induced solid‐phase epitaxial crystallization by time‐resolved optical reflectivity
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