Binding energy of vacancies to clusters formed in Si by high-energy ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1405814
Reference14 articles.
1. Ion-induced damage and amorphization in Si
2. Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling
3. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
4. Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reply to “Comment on ‘Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions’ ”;Physical Review B;2014-09-24
2. Comment on “Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions”;Physical Review B;2014-09-24
3. Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion;Japanese Journal of Applied Physics;2014-08-21
4. Modeling of defects, dopant diffusion and clustering in silicon;Journal of Computational Electronics;2013-10-23
5. Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions;Physical Review B;2013-08-15
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