The effect of shallow vs. deep level doping on the performance of thermoelectric materials-Reference-Cited by-同舟云学术

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The effect of shallow vs. deep level doping on the performance of thermoelectric materials

Published:2016-12-26 Issue:26 Volume:109 Page:263902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Song Qichen¹^ORCID,Zhou Jiawei¹,Meroueh Laureen¹,Broido David²,Ren Zhifeng³,Chen Gang¹

Affiliation:

1. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

2. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA

3. Department of Physics and TcSUH, University of Houston, Houston, Texas 77204, USA

Funder

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4973292

Reference44 articles.

1. Chapter 5 Phonon transport in low-dimensional structures

2. Spectral mapping of thermal conductivity through nanoscale ballistic transport

3. Bulk nanostructured thermoelectric materials: current research and future prospects

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