Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer
Author:
Affiliation:
1. U.S. Naval Research Laboratory, Washington, DC 20375, USA
Funder
Office of Naval Research
National Research Council
American Society for Engineering Education
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0007144
Reference35 articles.
1. Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
2. Crystalline Oxides on Silicon: The First Five Monolayers
3. Crystalline Oxides on Silicon
4. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors
5. Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures;Journal of Applied Physics;2023-07-10
2. A review on (Sr,Ca)TiO3-based dielectric materials: crystallography, recent progress and outlook in energy-storage aspects;Journal of Materials Science;2022-06-29
3. Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures;APL Materials;2021-11-01
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