Orientation‐dependent growth of InGaAs/InP for applications in laser‐diode arrays
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354208
Reference14 articles.
1. Multiwavelength InGaAs/InGaAsP strained-layer MQW-laser array using shadow-masked growth
2. 11.5 W pulsed operation of antiguided laser diode array
3. 100 W 671 nm visible laser diode array
4. Reliable 1.2W CW red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers
5. Monolithic integration of multiwavelength compressive-strained multiquantum-well distributed-feedback laser array with star coupler and optical amplifiers
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1. Mechanical Spectroscopy of Pure and Fe-Doped InP Films on Silicon Cantilevers;Defect and Diffusion Forum;2002-07
2. Cellular-automata-based simulation of anisotropic crystal growth;Journal of Crystal Growth;2000-12
3. Semiconductor lasers for planar integrated optoelectronics;Solid-State Electronics;2000-01
4. High-quality In0.53Ga0.47As on exactly (001)-oriented Si grown by metal-organic vapour-phase epitaxy;Journal of Crystal Growth;1997-02
5. Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1994-12-15
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