Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1707216
Reference16 articles.
1. High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing
2. Polycrystalline silicon thin-film transistors fabricated by defect reduction methods
3. High-Pressure H2O Vapor Heat Treatment Used to Fabricate Poly-Si Thin Film Transistors
4. Pulsed laser crystallization of hydrogen-free a-Si thin films for high-mobility poly-Si TFT fabrication
5. High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor
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