Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123456
Reference13 articles.
1. Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband transitions
2. Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum‐well structures
3. Postgrowth tuning of quantum‐well infrared detectors by rapid thermal annealing
4. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
5. Influence of interdiffusion processes on optical and structural properties of pseudomorphic In0.35Ga0.65As/GaAs multiple quantum well structures
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