Shallowp+layer in In0.53Ga0.47As using P/Be and As/Be co‐implant
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340166
Reference14 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Self-aligned In0.53Ga0.47As/semi-insulating/n+InP junction field-effect transistors
3. Triple implant (In,Ga)As/InP n-p-n heterojunction bipolar transistors for integrated circuit applications
4. Solid state: Integrated optoelectronics: The marriage of lasers, detectors, and transistors in a single monolithic package promises fact, reliable data transmission
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1. (Invited) A Brief Review of Doping Issues in III-V Semiconductors;ECS Transactions;2013-05-03
2. Zinc and group V element co-implantation in indium phosphide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05
3. Effect of capping layers on activation of Be/As-implanted semi-insulating InP:Fe;Applied Physics Letters;1997-07-21
4. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY;International Journal of Modern Physics B;1993-12-30
5. Ion implantation and dry etching characteristics of InGaAsP (λ=1.3 μm);Journal of Applied Physics;1993-08
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