Effective photoconductivity of exfoliated black phosphorus for optoelectronic switching under 1.55 μm optical excitation-Reference-Cited by-同舟云学术

Effective photoconductivity of exfoliated black phosphorus for optoelectronic switching under 1.55 μm optical excitation

Published:2016-01-14 Issue:2 Volume:119 Page:024506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Penillard A.¹^ORCID,Tripon-Canseliet C.¹,Rosticher M.²,Maksimovic I.¹,Liu Z.³,Géron E.¹

Affiliation:

1. Laboratoire de Physique et d'Etude des Matériaux, Ecole Supérieure de Physique et de Chimie Industrielle de la ville de Paris, UMR8213, 10 rue Vauquelin 75231 Paris Cedex 05, France

2. Laboratoire Pierre Aigrain, Département de Physique de l'Ecole Normale Supérieure, 24 rue Lhomond 75231 Paris Cedex 05, France

3. School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore

Funder

Centre National de la Recherche Scientifique (CNRS)

National Research Foundation Singapore (NRF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939615

Reference10 articles.

1. Picosecond GaAs‐based photoconductive optoelectronic detectors

2. Microwave On/Off Ratio Enhancement of GaAs Photoconductive Switches at Nanometer Scale

3. LT-GaAs detector with 451 fs response at 1.55 [micro sign]m via two-photon absorption

4. 1.55-$\mu$m GaNAsSb-Based Photoconductive Switch for Microwave Switching

5. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

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