Bias stress instability in pentacene thin film transistors: Contact resistance change and channel threshold voltage shift
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2844857
Reference17 articles.
1. Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport
2. Bias-induced threshold voltages shifts in thin-film organic transistors
3. Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method
4. Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility
5. Charge injection process in organic field-effect transistors
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