Praseodymium silicate layers with atomically abrupt interface on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2032596
Reference11 articles.
1. Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity
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3. Spectroscopic characterization of highkdielectrics: Applications to interface electronic structure and stability against chemical phase separation
4. Praseodymium silicate formed by postdeposition high-temperature annealing
5. In situ low-angle x-ray scattering study of phase separation in initially mixed HfO2–SiO2 thin film interfaces
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