Subthreshold electron transport properties of ultrathin film phase change material Ge2Sb2Te5
Author:
Affiliation:
1. Department of Physics, Kharazmi University, 15719-14911 Tehran, Iran
2. Department of Physics, Payame Noor University (PNU), 19395-3697 Tehran, Iran
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5089798
Reference29 articles.
1. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
2. Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices
3. Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes
4. One-Dimensional Thickness Scaling Study of Phase Change Material $(\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5})$ Using a Pseudo 3-Terminal Device
5. Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
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1. Charge Transport Models for Amorphous Chalcogenides;Springer Handbook of Semiconductor Devices;2022-11-11
2. The effect of carbon nanotube electrodes on electron transport properties of nanowire phase change material Ge2Sb2Te5;Results in Physics;2022-08
3. Kinetic Monte Carlo simulations of Ge–Sb–Te thin film crystallization;Nanotechnology;2022-05-03
4. Low bias electron transport properties of the graphene-Ge2Sb2Te5 heterostructure device;Results in Physics;2020-03
5. A unified mid-gap defect model for amorphous GeTe phase change material;Applied Physics Letters;2020-02-03
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