Real‐time investigations of GaAs surface cleaning with a hydrogen electron cyclotron resonance plasma by optical reflection spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112454
Reference21 articles.
1. MBE regrowth with hydrogen cleaning and its application for the fabrication of surface tunnel transistors
2. Direct Growth of AlGaAs/GaAs Single Quantum Wells on GaAs Substrates Cleaned by Electron Cyclotron Resonance (ECR) Hydrogen Plasma
3. Application of ellipsometry to crystal growth by organometallic molecular beam epitaxy
4. Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs
5. Residual Carbon and Oxygen Surface Contamination of Chemically Etched GaAs (001) Substrates
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1. Recent progress on the electronic structure, defect, and doping properties of Ga2O3;APL Materials;2020-02-01
2. GaAs wafer bonding by atomic hydrogen surface cleaning;Journal of Applied Physics;1999-12-15
3. Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-09
4. In situ cleaning of GaAs and AlxGa1−xAs surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07
5. Dry etching and induced damage;Microelectronic Engineering;1996-09
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