Local distribution of deep centers in GaP studied by infrared cathodoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104681
Reference8 articles.
1. ODMR investigation of the PGaantisite defect in GaP
2. Effects of stoichiometry on deep levels in MOVPE GaP
3. Deep acceptorlike recombination centers in bulk liquid encapsulated Czochralski GaP, studied with optically detected magnetic resonance
4. Spatial distribution of vacancy defects in GaP wafers
5. Influence of vacancy defects on the luminescence of GaP studied by CL and positrons
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2. Digital near-infrared (NIR) cathodoluminescence (CL) imaging and image processing;American Mineralogist;2007-02-01
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4. Controlled vapor-pressure heat-treatment effect on deep levels in liquid-encapsulated czochralski-grown GaP crystals;Journal of Electronic Materials;2002-06
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