Lifshitz topological transitions, induced by doping and deformation in single-crystal bismuth wires

Author:

Nikolaeva A. A.1,Konopko L. A.1,Huber T. E.2,Kobylianskaya A. K.3,Para Gh. I.3

Affiliation:

1. Ghitu Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, 3/3 Akademicheskaya St., Chisinau MD-2028, Republic of Moldova and International Laboratory of High Magnetic Fields and Low Temperatures, 95 Gajowicka St., 53-421 Wroclaw, Poland

2. Department of Chemistry, Howard University, 500 College St. N.W., Washington DC 20059, USA

3. Ghitu Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, 3/3 Akademicheskaya St., Chisinau MD-2028, Republic of Moldova

Publisher

AIP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous)

Reference27 articles.

1. I. M. Lifshitz , Sov. Phys. - JETP 11, 1130 (1960)

2. I. M. Lifshitz , [Zh. Eksp. Teor. Fiz. 38, 1569 (1960) (in Russian)].

3. I. M. Lifshitz , Sov. Phys. - JETP 41, 125 (1975)

4. I. M. Lifshitz , [Zh. Eksp. Teor. Fiz. 68, 257 (1975) (in Russian)].

5. V. G. Vaks , A. V. Trefilov , and S. V. Fomichev , Sov. Phys. - JETP 80, 1614 (1981).

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Some peculiarities of thermopower at the Lifshitz topological transitions due to stacking change in bilayer and multilayer graphene;Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences;2019-06

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