Excitonic transitions in β-FeSi2 epitaxial films and single crystals-Reference-Cited by-同舟云学术

Excitonic transitions in β-FeSi2 epitaxial films and single crystals

Published:2004-03 Issue:5 Volume:95 Page:2441-2447
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Birdwell A. G.,Shaffner T. J.,Chandler-Horowitz D.,Buh G. H.,Rebien M.,Henrion W.,Stauß P.,Behr G.,Malikova L.,Pollak F. H.,Littler C. L.,Glosser R.,Collins S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1643778

Reference53 articles.

1. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

2. An efficient room-temperature silicon-based light-emitting diode

3. Electronic structure of β-FeSi2

4. Abinitioband‐structure calculation of the semiconductor β‐FeSi2

5. Electronic structure of buried α-FeSi2and β-FeSi2layers: Soft-x-ray-emission and -absorption studies compared to band-structure calculations

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