Response to “Comment on ‘Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor’ ” [Appl. Phys. Lett. 81, 2130 (2002)]-Reference-Cited by-同舟云学术

Response to “Comment on ‘Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor’ ” [Appl. Phys. Lett. 81, 2130 (2002)]

Published:2002-09-09 Issue:11 Volume:81 Page:2131-2132
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hanbicki A. T.,Jonker B. T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1507361

Reference13 articles.

1. Comment on “Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor” [Appl. Phys. Lett. 80, 1240 (2002)]

2. Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

3. Measuring the Spin Polarization of a Metal with a Superconducting Point Contact

4. How to Define and Calculate the Degree of Spin Polarization in Ferromagnets

5. Spin polarization of tunneling current from ferromagnet/Al2O3 interfaces using copper-doped aluminum superconducting films

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