Growth and properties of GaN and AlN layers on silver substrates-Reference-Cited by-同舟云学术

Growth and properties of GaN and AlN layers on silver substrates

Published:2005-11-21 Issue:21 Volume:87 Page:212109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mikulics Martin,Kočan Martin,Rizzi Angela,Javorka Peter,Sofer Zdeněk,Stejskal Josef,Marso Michel,Kordoš Peter,Lüth Hans

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2135879

Reference6 articles.

1. Deposition of polycrystalline silicon films on metal substrates under ultra-high vacuum

2. The Status of Amorphous Silicon Solar Cells

3. K. Yamada, H. Asahi, H. Tampo, Y. Imanishi, K. Ohnishi, and K. Asami, Proceedings of International Workshop on Nitride Semiconductors (Inst. Pure & Appl. Phys, Tokyo, Japan, 2000), p. 556.

4. Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates

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