Optical anisotropy and spin polarization in ordered GaInP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111828
Reference11 articles.
1. Dependence of the optical properties of semiconductor alloys on the degree of long‐range order
2. Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1−xAsandGaAsxSb1−xalloys
3. Electroreflectance of ordered Ga0.5In0.5P Alloys
4. Electroreflectance polarization study of valence‐band states in ordered Ga0.5In0.5P
5. Valence-band splitting in orderedGa0.5In0.5P studied by temperature-dependent photoluminescence polarization
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2. Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?;Nanoscale;2016
3. Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP;Applied Physics Letters;2014-11-17
4. Polarized and non-polarized photoluminescence of GaInP2 alloy with partial CuPt-type atomic ordering: ordered domains vs. disordered regions;J. Mater. Chem. C;2014
5. Two-photon spin injection in semiconductors;Physical Review B;2005-01-18
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