Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1333741
Reference12 articles.
1. Silicon carbide for microwave power applications
2. Advances in SiC MOS Technology
3. Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide
4. Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC
5. The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC
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1. Impact of the dangling bond defects and grain boundaries on trapping recombination process in polycrystalline 3C SiC;Journal of Alloys and Compounds;2020-05
2. Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals;Materials Science Forum;2005-05
3. Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC;Materials Science Forum;2004-06
4. Observation of interface defects in thermally oxidized SiC using positron annihilation;Applied Physics Letters;2003-03-31
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