Stresses and magnetoelastic anisotropies at implantation edges in ion‐implanted garnet films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334671
Reference5 articles.
1. Charged wall formation mechanism in ion‐implanted contiguous disk bubble devices
2. The effects of stress relaxation and anisotropic magnetostriction on charged walls in ion implanted garnets
3. Modelling strain distributions in ion‐implanted magnetic bubble materials
4. Annealing behavior of deuterium implanted garnet films
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stress‐related problems in silicon technology;Journal of Applied Physics;1991-09-15
2. Stress from a parallelepipedic thermal inclusion in a semispace;Journal of Applied Physics;1989-09-15
3. Structure and magnetic properties of R2(M, Ni)14B pseudoternary compounds (R ≡ Nd, Pr; M ≡ Fe, Co);Journal of the Less Common Metals;1988-12
4. Stress/strain distribution around implantation boundaries III. Magnetization distribution around non-implanted discs in ferrimagnetic garnet epilayers supporting bubbles;Philosophical Magazine A;1988-06
5. Computer simulation of magnetization distributions in contiguous-disk bubble devices;IEEE Transactions on Magnetics;1987-09
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