Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120692
Reference18 articles.
1. The Dependence of Ring‐Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon Crystals
2. The mechanism of swirl defects formation in silicon
3. Improvement of Gate Oxide Integrity Characteristics in CZ-Grown Si Crystals by H2 annealing
4. Investigations on the correlation between growth rate and gate oxide integrity of Czochralski-grown silicon
5. Improvement of Czochralski Silicon Wafers By High‐Temperature Annealing
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