Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124527
Reference14 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Characterization of MOCVD-grown InP on
3. Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs/GaAs(110) Heteroepitaxy
4. Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
5. Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A
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