Design of an erasable spintronics memory based on current-path-dependent field-free spin orbit torque-Reference-Cited by-同舟云学术

Design of an erasable spintronics memory based on current-path-dependent field-free spin orbit torque

Published:2020-01-01 Issue:1 Volume:10 Page:015317
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhou Haochang¹²^ORCID,Wang Chao³^ORCID,Li Zuwei¹²,Wang Zhaohao¹²,Liu Tongxi¹,Wu Bi³^ORCID,Zhao Weisheng¹²^ORCID

Affiliation:

1. School of Microelectronics, Beijing Advanced Innovation Center for Big Data and Brain Computing, Fert Beijing Research Institute, Beihang University, Beijing 100191, China

2. Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266100, China

3. School of Electronics and Information Engineering, Beihang University, Beijing 100191, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5130050

Reference23 articles.

1. Spin-Transfer Torque Memories: Devices, Circuits, and Systems

2. Emerging Three-Terminal Magnetic Memory Devices

3. Ultra-Fast Perpendicular Spin–Orbit Torque MRAM

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