Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121245
Reference15 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
5. Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy
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1. Metal Organic Vapor Phase Growth of Complex Semiconductor Alloys;AIP Conference Proceedings;2010
2. GaAs1−xNx on GaAs(001): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy;Journal of Crystal Growth;2008-03
3. Formation of atomic hydrogen during radio frequency nitrogen plasma assisted chemical beam epitaxy of III–V dilute nitrides;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
4. Generation of atomic hydrogen during radio-frequency nitrogenplasma-assisted gas-source molecular-beam epitaxy of III-V dilute nitrides;Applied Physics Letters;2004-09-27
5. Three Growth-Temperature-Dependent Regions for Nitrogen Incorporation in GaNAs Grown by Chemical Beam Epitaxy;Japanese Journal of Applied Physics;2004-05-11
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