Extremely rapid outdiffusion ofn‐type impurities in InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93781
Reference14 articles.
1. Heat Treatment of n-Type InP in Controlled Phosphorus Vapor
2. Heat Treatment of Zn-Doped p-Type InP
3. Epitaxial growth of Cd‐doped InP from the vapor
4. Zn‐doped vapor‐grown InP
5. Iron and Chromium Redistribution in Semi‐Insulating InP
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. X‐Ray, Photoluminescence, and SIMS Characterization of InGaAs / InP Grown by Vapor Phase Epitaxy;Journal of The Electrochemical Society;1987-05-01
2. The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE;Journal of Electronic Materials;1985-05
3. Mechanisms of atomic diffusion in the III-V semiconductors;Journal of Physics D: Applied Physics;1985-04-14
4. Effects of thermal annealing on semi‐insulating undoped GaAs grown by the liquid‐encapsulated Czochralski technique;Journal of Applied Physics;1985-03-15
5. Influence of ambient media on the out‐diffusion of S from InP:S;Journal of Applied Physics;1984-09-15
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