Energetics and deep levels of interstitial defects in the compound semiconductors GaAs, AlAs, ZnSe, and ZnTe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341675
Reference25 articles.
1. Diffusion of zinc into Ga1−xAlxAs
2. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
3. Prediction of equilibrium defect concentrations in GaAs and ZnSe
4. Deep levels associated with impurities at the bond-centered interstitial site in Si
5. Deep levels associated with impurities at the bond-centered interstitial site in Si
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