Current-induced magnetization switching in epitaxial <i>L</i>1<sub>0</sub>-FePt/Cr heterostructures through orbital Hall effect-Reference-Cited by-同舟云学术

Current-induced magnetization switching in epitaxial L1₀-FePt/Cr heterostructures through orbital Hall effect

Published:2022-07-07 Issue:1 Volume:132 Page:013901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lyu H. C.¹²^ORCID,Zhao Y. C.²^ORCID,Qi J.¹,Yang G.³^ORCID,Qin W. D.⁴,Shao B. K.¹,Zhang Y.¹²,Hu C. Q.⁴,Wang K.¹,Zhang Q. Q.⁴,Zhang J. Y.¹^ORCID,Zhu T.²^ORCID,Long Y. W.²^ORCID,Wei H. X.²,Shen B. G.²,Wang S. G.¹^ORCID

Affiliation:

1. Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

3. School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China

4. Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China

Abstract

The current-induced magnetization switching (CIMS) was successfully observed in epitaxial L10-FePt/CrxPt1−x (0 ≤ x ≤ 1) heterostructures grown by molecular beam epitaxy with large perpendicular magnetic anisotropy. With increasing Cr content, the critical switching current density ( Jc) in FePt/CrxPt1−x heterostructures exhibited a decreasing trend, where it was greatly reduced by 69% in FePt/Cr (3 d) films compared to FePt/Pt (5 d) films with strong spin–orbit coupling. Furthermore, the same switching polarities were observed for all FePt/CrxPt1−x samples, indicating that the orbital Hall effect played a dominant role in CIMS for FePt/Cr films because of opposite spin Hall angles for Cr and Pt. Our results will put forward the applications of L10-FePt in collaboration with the orbital Hall effect from 3 d metals in current-controlled magnetic random access memory and neuromorphic computing.

Funder

National Key Research and Development Program of China

the Science Center of the National Natural Science Foundation of China

the Natural Science foundation of China.

the ISF-NSFC joint research program

the State Key Laboratory for Advanced Metals and Materials

the Beijing Natural Science Foundation Key Program

the Fundamental Research Funds for the Central Universities

Publisher

AIP Publishing

Subject

General Physics and Astronomy