Conducting interface states at LaInO3/BaSnO3 polar interface controlled by Fermi level
Author:
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4959960
Reference42 articles.
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4. Selective chemical etching for termination layer control of BaSnO3 and 2DEG formation at the LaInO3/BaSnO3 interface;APL Materials;2023-12-01
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