Sulfur incorporation and thickness variation in vapor‐phase‐epitaxial GaAs layers for FET’s
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91064
Reference8 articles.
1. Epitaxial Growth of Doped and Pure GaAs in an Open Flow System
2. High-yield self-alignment method for submicrometre GaAs m.e.s.f.e.t.s
3. A feedback method for investigating carrier distributions in semiconductors
4. Thermodynamic and Experimental Aspects of Gallium Arsenide Vapor Growth
5. Variation of GaAs Epitaxial Growth Rate with Distance along Substrate within a Constant Temperature Zone
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1. Zn and S Doping in GaAs Selective Area Growth by Metal–Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2009-03-23
2. Effect of total pressure on the uniformity of epitaxial GaAs films grown in the Ga-HCl-AsH3-H2 system;Journal of Electronic Materials;1985-11
3. THE DESIGN AND OPTIMISATION OF A LARGE SCALE VPE REACTOR FOR THE GROWTH OF GaAs BY THE HALIDE PROCESS;Le Journal de Physique Colloques;1982-12
4. DOPANT INCORPORATION DURING LP-VPE OF GaAs;Le Journal de Physique Colloques;1982-12
5. Growth of GaAs VPE layers with high thickness uniformity;Journal of Crystal Growth;1981-03
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