Inhomogeneous defect activation by rapid thermal processes in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100726
Reference9 articles.
1. Electron diffusion length in rapid thermal processedp‐type silicon
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3. The role of impurities in the formation of quenched-in recombination centres in thermally treated silicon
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5. Experiments on the origin of process−induced recombination centers in silicon
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