Threshold switching via electric field induced crystallization in phase-change memory devices
Author:
Affiliation:
1. College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4729551
Reference29 articles.
1. Phase Change Memory
2. Design Rules for Phase-Change Materials in Data Storage Applications
3. Arithmetic and Biologically-Inspired Computing Using Phase-Change Materials
4. Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
5. Threshold switching and phase transition numerical models for phase change memory simulations
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