Low‐temperature interdiffusion between aluminum thin films and GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323294
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1. In situ grown single crystal aluminum as a nonalloyed ohmic contact to n-ZnSe by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2020-07
2. Calculation of the Schottky barrier height at the Al/GaAs(001) heterojunction: Effect of interfacial atomic relaxations;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1993-07
3. Thermal stability of Mo–Al Schottky metallizations on n-GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05
4. The Study on the Pt Barrier Effect in Al/Pt/Ti/n-GaAs;MRS Proceedings;1992
5. Annealing studies on Pd/n-GaAs Schottky diodes;Semiconductor Science and Technology;1991-08-01
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